| PART |
Description |
Maker |
| GT10G131 GT10.131 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT8G134 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G101SM06 GT25G101SM |
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT20G101SM E001913 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT5G134 |
IGBT for strobe flash
|
TOSHIBA
|
| GT8G151 |
IGBT for strobe flash
|
TOSHIBA
|
| CY20AAJ-8F |
GTS03024-2s-025 N沟道IGBT的的频闪闪光
Nch IGBT for STROBE FLASHER
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Powerex, Inc.
Powerex Power Semiconductors
Cypress Semiconductor
Mitsubishi Electric Corporation
|
